advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 300v lower on-resistance r ds(on) 48m high speed switching i d 48a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i dm a i dr a i dr(pulse) a p d @t c =25 w w/ i ar avalanche current a e ar single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.4 /w rthj-a maximum thermal resistance, junction-ambient 40 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 312 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.2 30 45 pulsed drain current 1 160 gate-source voltage + 30 continuous drain current, v gs @ 10v 48 parameter rating drain-source voltage 300 1 ap88n30w rohs-compliant product 201009158 body-drain diode reverse drain current body-drain diode reverse drain peak current 1 48 160 g d s g d s to-3p a p88n30 from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the to-3p package is preferred for commercial & industrial applications with higher power level preclusion than to-220 device.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 300 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 48 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3 - 4.5 v g fs forward transconductance v ds =10v, i d =30a - 62 - s drain-source leakage current v ds =300v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =240v, v gs =0v - - 200 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 0.1 ua q g total gate charge 2 i d =30a - 150 250 nc q gs gate-source charge v ds =240v - 35 - nc q gd gate-drain ("miller") charge v gs =10v - 60 - nc t d(on) turn-on delay time 2 v ds =150v - 50 - ns t r rise time i d =30a - 105 - ns t d(off) turn-off delay time r g =10 - 220 - ns t f fall time v gs =10v - 110 - ns c iss input capacitance v gs =0v - 8440 13500 pf c oss output capacitance v ds =15v - 1775 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 2.2 3.3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =10a, v gs =0v - 300 - ns q rr reverse recovery charge di/dt=100a/s - 3.8 - c notes: 1.pulse width limited by max. junction temperature 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =30a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap88n30w i dss
ap88n30 w fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 40 42 44 46 48 50 45678910 v gs gate-to-source voltage (v) r ds(on) (m ) t c =25 o c 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =44a v g =10v 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) i d =44a 0 40 80 120 160 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 20 40 60 80 100 0.0 4.0 8.0 12.0 16.0 20.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v i d =22a
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum drain current v.s. fig 12. gate charge waveform case temperature 4 ap88n30w 0 2 4 6 8 10 12 0 40 80 120 160 200 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 150 v v ds = 180 v v ds = 240 v i d =30a q v g 10v q gs q gd q g charge 1 10 100 1000 10000 1 6 11 16 21 26 31 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
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